Study of Photovoltage Decays in Nanostructured Ge/Si

Author(s)

O. Korotchenkov, A. Nadtochiy, V. Schlosser

Abstract

Motivated by the importance of the oxidized silicon layers, we have

studied the surface photovoltage (SPV) transients in nanoislands of Ge_xSi_1x

on silicon and oxidized Si surfaces. It is shown that the SPV decays

can be approximated by the stretched-exponential form, with the β

values ranging from 0.3 to 0.6 for the islands grown on oxide-covered

Si substrates and from 0.5 to 1 for the ones placed on bare Si. On this

basis, a simple qualitative model is proposed that takes into account a

donor-and acceptor-like interface states at the GeSi/SiO₂ and Si/SiO₂

interface, which act as recombination centers with densities dependent

on the GeSi coverage. These results can be used to improve the

functionality of photoelectric devices based on Ge/Si.

Organisation(s)

Electronic Properties of Materials

External organisation(s)

Taras Shevchenko National University of Kyiv (KNU)

Pages

406-411

No. of pages

6

DOI

https://doi.org/10.4028/www.scientific.net/SSP.205-206.406

Publication date

2014

Peer reviewed

Yes

Austrian Fields of Science 2012

103020 Surface physics, 103018 Materials physics, 103009 Solid state physics

Keywords

ASJC Scopus subject areas

Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Materials Science(all)

Portal url

https://ucrisportal.univie.ac.at/en/publications/study-of-photovoltage-decays-in-nanostructured-gesi(f7ae4266-b660-47f1-80c6-3283bcb91cdd).html