Atomically precise semiconductor-graphene and hBN interfaces by Ge intercalation
- Author(s)
- N. I. Verbitskiy, A. V. Fedorov, G. Profeta, A. Stroppa, L. Petaccia, B. Senkovskiy, A. Nefedov, C. Wöll, D. Y. Usachov, D. V. Vyalikh, L. V. Yashina, A. A. Eliseev, Thomas Pichler, A. Grüneis
- Organisation(s)
- Electronic Properties of Materials
- External organisation(s)
- Universität zu Köln, Anuchin Research Institute and Museum of Anthropology, Leibniz-Institut für Festkörper- und Werkstoffforschung Dresden, Saint Petersburg State University, Università degli Studi dell’Aquila, Institute of Genetics and Biophysics "Adriano Buzzati-Traverso", CNR, Elettra─Sincrotrone Trieste, Technische Universität Dresden, Karlsruher Institut für Technologie, Ikerbasque Basque Foundation for Science, Donostia International Physics Centre (DIPC), University of the Basque Country, JSC Giredmet SRC RF
- Journal
- Scientific Reports
- Volume
- 5
- No. of pages
- 9
- ISSN
- 2045-2322
- DOI
- https://doi.org/10.1038/srep17700
- Publication date
- 12-2015
- Peer reviewed
- Yes
- Austrian Fields of Science 2012
- 103018 Materials physics
- ASJC Scopus subject areas
- General
- Portal url
- https://ucrisportal.univie.ac.at/en/publications/atomically-precise-semiconductorgraphene-and-hbn-interfaces-by-ge-intercalation(c2bd1599-5fcf-4480-b425-32aa1ac83993).html