Electronic properties of hydrogenated quasi-free-standing graphene
- Author(s)
- Danny Haberer, Luca Petaccia, Ying Wang, H Quian, Mani Farjam, S. A. Jafari, Hermann Sachdev, Alexander V. Fedorov, Dmitry Usachov, D.V. Vyalikh, Xianjie Liu, Oleg Vilkov, Vera K. Adamchuk, Stephan Irle, Martin Knupfer, Bernd Büchner, Alexander Grüneis
- Abstract
ailoring the electronic properties of graphene is of fundamental interest regarding its application in electronic devices. One of the key strategies is chemical functionalization which modifies the pi-electron system and thus can induce band gaps. However, in order to control the degree of functionalization it is crucial to know the exact amount of the chemisorbed species. We show with angle-resolved photoemission spectroscopy (ARPES) the formation of a band gap in graphene and estimate the hydrogen coverage from the scattering rate. Using X-ray photoemission spectroscopy (XPS) we identify the chemical environments in hydrogenated graphene and determine the total hydrogen to carbon (H/C)-ratio directly from the spectra. We then compare ARPES and XPS as tools for determining the H/C-ratio and discuss the results from molecular dynamics (MD) simulations.
- Organisation(s)
- Electronic Properties of Materials
- External organisation(s)
- Leibniz-Institut für Festkörper- und Werkstoffforschung Dresden, Elettra─Sincrotrone Trieste, Nagoya University, Institute for Research in Fundamental Sciences (IPM), Universität des Saarlandes, Saint Petersburg State University, Technische Universität Dresden
- Journal
- Physica Status Solidi. B: Basic Research
- Volume
- 248
- Pages
- 2639-2643
- No. of pages
- 5
- ISSN
- 0370-1972
- DOI
- https://doi.org/10.1002/pssb.201100521
- Publication date
- 2011
- Peer reviewed
- Yes
- Austrian Fields of Science 2012
- 103015 Condensed matter
- Portal url
- https://ucrisportal.univie.ac.at/en/publications/electronic-properties-of-hydrogenated-quasifreestanding-graphene(569a1ebb-27b8-452a-900b-f53848ca3ae1).html