The influence of γ-irradiation on nitrogen configuration in nitrogen-doped single-walled carbon nanotubes

Author(s)
Theerapol Thurakitseree, Christian Kramberger, Narong Chanlek, Ratchadaporn Supruangnet, Anurat Wisitsorraat, Hideki Nakajima, Shigeo Maruyama
Abstract

Electronic properties of nitrogen-doped single-walled carbon nanotubes (N-doped SWCNTs) depend on carbon and nitrogen configuration. Depending on the intrinsic nitrogen structure, it can be either intrinsic p- or n- doping. Here, we have investigated the influence of soft gamma (γ)-irradiation on the nitrogen configuration in vertically aligned N-doped SWCNT arrays. As the irradiation dose increased, pyridinic and graphitic nitrogens become more predominant. In general, the presence of holes refer to p-doping. However, XPS spectra show n-doping features, whereas the slight downshift in the G line position in Raman spectra is from compensating the ambient p-doping. The local transition of π* nitrogen was also revealed by X-ray absorption spectroscopy.

Organisation(s)
Electronic Properties of Materials
External organisation(s)
Maejo University, Synchrotron Light Research Institute, National Electronics and Computer Technology Center (NECTEC), University of Tokyo, National Institute of Advanced Industrial Science and Technology (AIST)
Journal
Diamond and Related Materials
Volume
101
No. of pages
5
ISSN
0925-9635
DOI
https://doi.org/10.1016/j.diamond.2019.107569
Publication date
01-2020
Peer reviewed
Yes
Austrian Fields of Science 2012
103018 Materials physics
Keywords
ASJC Scopus subject areas
Electronic, Optical and Magnetic Materials, Mechanical Engineering, Materials Chemistry, Chemistry(all), Electrical and Electronic Engineering
Portal url
https://ucrisportal.univie.ac.at/en/publications/the-influence-of-irradiation-on-nitrogen-configuration-in-nitrogendoped-singlewalled-carbon-nanotubes(4c6b35c6-6dd0-4a7d-8a5f-0378fc546850).html