Nitrogen-Doped Graphene: Efficient Growth, Structure, and Electronic Properties
- Author(s)
- Dmitry Usachov, Oleg Vilkov, Alexander Grüneis, Danny Haberer, Alexander V. Fedorov, Vera K. Adamchuk, Alexei B. Preobrajenski, P Dudin, Alexei Barinov, Martin Oehzelt, Clemens Laubschat, D.V. Vyalikh
- Abstract
A novel strategy for efficient growth of nitrogen-doped graphene (N-graphene) on a large scale from s-triazine molecules is presented. The growth process has been unveiled in situ using time-dependent photoemission. It has been established that a postannealing of N-graphene after gold intercalation causes a conversion of the N environment from pyridinic to graphitic, allowing to obtain more than 8096 of all embedded nitrogen in graphitic form, which is essential for the electron doping in graphene. A band gap, a doping level of 300 meV, and a charge-carrier concentration of similar to 8 x 10(12) electrons per cm 2, induced by 0.4 atom % of graphitic nitrogen, have been detected by angle-resolved photoeinission spectroscopy, which offers great promise for implementation of this system in next generation electronic devices.
- Organisation(s)
- Electronic Properties of Materials
- External organisation(s)
- Saint Petersburg State University, Leibniz-Institut für Festkörper- und Werkstoffforschung Dresden, Lund University, Elettra─Sincrotrone Trieste, Helmholtz-Zentrum Berlin für Materialien und Energie, Technische Universität Dresden
- Journal
- Nano Letters: a journal dedicated to nanoscience and nanotechnology
- Volume
- 11
- Pages
- 5401-5407
- No. of pages
- 7
- ISSN
- 1530-6984
- DOI
- https://doi.org/10.1021/nl2031037
- Publication date
- 2011
- Peer reviewed
- Yes
- Austrian Fields of Science 2012
- 103015 Condensed matter
- Portal url
- https://ucris.univie.ac.at/portal/en/publications/nitrogendoped-graphene-efficient-growth-structure-and-electronic-properties(49480cb7-fbd2-448f-9271-4b251d0fa0b6).html