Optimization of preparation of epitaxial β-SiC layers formed by fullerene-carbonization of silicon
- Author(s)
- M. Philipp, M. Fünffinger, S. Henke, W. Göb, W. Lang, H. Kuzmany, B. Rauschenbach, B. Stritzker
- Organisation(s)
- Electronic Properties of Materials
- Pages
- 600-604
- No. of pages
- 5
- Publication date
- 1996
- Austrian Fields of Science 2012
- 103018 Materials physics
- Portal url
- https://ucrisportal.univie.ac.at/en/publications/1a0e674c-2fcb-4917-8b20-838c7831bd17