The Chemistry of Imperfections in N-Graphene
- Author(s)
- Dmitry Usachov, Alexander Fedorov, Oleg Vilkov, Boris Senkovskiy, Vera K. Adamchuk, Lada V. Yashina, Andrey A. Volykhov, Mani Farjam, Nikolay I. Verbitskiy, Alexander Grueneis, Clemens Laubschat, Denis V. Vyalikh
- Abstract
Many propositions have been already put forth for the practical use of N-graphene in various devices, such as batteries, sensors, ultracapacitors, and next generation electronics. However, the chemistry of nitrogen imperfections in this material still remains an enigma. Here we demonstrate a method to handle N-impurities in graphene, which allows efficient conversion of pyridinic N to graphitic N and therefore precise tuning of the charge carrier concentration. By applying photoemission spectroscopy and density functional calculations, we show that the electron doping effect of graphitic N is strongly suppressed by pyridinic N. As the latter is converted into the graphitic configuration, the efficiency of doping rises up to half of electron charge per N atom.
- Organisation(s)
- Electronic Properties of Materials
- External organisation(s)
- Saint Petersburg State University, Leibniz-Institut für Festkörper- und Werkstoffforschung Dresden, Universität zu Köln, Technische Universität Dresden, Anuchin Research Institute and Museum of Anthropology, Institute for Research in Fundamental Sciences (IPM)
- Journal
- Nano Letters: a journal dedicated to nanoscience and nanotechnology
- Volume
- 14
- Pages
- 4982-4988
- No. of pages
- 7
- ISSN
- 1530-6984
- DOI
- https://doi.org/10.1021/nl501389h
- Publication date
- 09-2014
- Peer reviewed
- Yes
- Austrian Fields of Science 2012
- 103020 Surface physics, 103018 Materials physics, 103009 Solid state physics
- Keywords
- ASJC Scopus subject areas
- Condensed Matter Physics, Mechanical Engineering, Bioengineering, General Chemistry, General Materials Science
- Portal url
- https://ucrisportal.univie.ac.at/en/publications/109b4531-1c07-4f02-a73e-78f15b8be9be