Electrical and micromechanical performance of ultrasonically cleaned silicon wafers
- Author(s)
- A. Nadtochiy, Artem Podolian, Vasyl Kuryliuk, A. Kuryliuk, Oleg Korotchenkov, Julian Schmid, Viktor Schlosser
- Abstract
The evolution of the electrical and micromechanical properties of Si wafers subjected to a kHz-frequency ultrasonic treatment in a water-containing ultrasonic cleaning bath is reported. The cleaning stages observed with varying treatment time are discussed. It is believed that, wafer treating during the first ? 60 min is capable of removing contaminating particulates from the wafer surface and actives interface dangling bonds. These are leading to a decrease of subsurface resistance towards dislocation displacements as observed by the micro-hardness decrease, affect free carrier migration barriers seen in variations of the I-V barrier heights, and acts as recombination centers resulting in accelerated photovoltage decays. Although an exact mechanism is not yet clarified, a partial healing of the bonds may occur at longer excitation times ( ? 60-120 min) thus partially reversing the observed changes.
- Organisation(s)
- Electronic Properties of Materials
- External organisation(s)
- Taras Shevchenko National University of Kyiv (KNU)
- Pages
- 261-264
- No. of pages
- 4
- DOI
- https://doi.org/10.1109/MIEL.2010.5490485
- Publication date
- 2010
- Austrian Fields of Science 2012
- 1030 Physics, Astronomy, 103009 Solid state physics
- Portal url
- https://ucris.univie.ac.at/portal/en/publications/electrical-and-micromechanical-performance-of-ultrasonically-cleaned-silicon-wafers(0c6b5015-577d-418a-b724-6dcca9e4fd9a).html