Study of Photovoltage Decays in Nanostructured Ge/Si

Author(s)
O. Korotchenkov, A. Nadtochiy, V. Schlosser
Abstract

Motivated by the importance of the oxidized silicon layers, we have

studied the surface photovoltage (SPV) transients in nanoislands of GexSi1x

on silicon and oxidized Si surfaces. It is shown that the SPV decays

can be approximated by the stretched-exponential form, with the ╬▓

values ranging from 0.3 to 0.6 for the islands grown on oxide-covered

Si substrates and from 0.5 to 1 for the ones placed on bare Si. On this

basis, a simple qualitative model is proposed that takes into account a

donor-and acceptor-like interface states at the GeSi/SiO2 and Si/SiO2

interface, which act as recombination centers with densities dependent

on the GeSi coverage. These results can be used to improve the

functionality of photoelectric devices based on Ge/Si.

Organisation(s)
Electronic Properties of Materials
External organisation(s)
Taras Shevchenko National University of Kyiv (KNU)
Pages
406-411
No. of pages
6
DOI
https://doi.org/10.4028/www.scientific.net/SSP.205-206.406
Publication date
2014
Austrian Fields of Science 2012
Materials physics, Solid state physics, Surface physics
Keywords
Portal url
https://ucris.univie.ac.at/portal/en/publications/study-of-photovoltage-decays-in-nanostructured-gesi(f7ae4266-b660-47f1-80c6-3283bcb91cdd).html