Comparison of Doping Levels of Single-Walled Carbon Nanotubes Synthesized by Arc-Discharge and Chemical Vapor Deposition Methods by Encapsulated Silver Chloride

Marianna V. Kharlamova, Christian Kramberger, Oleg Domanov, Andreas Mittelberger, Takeshi Saito, Kazuhiro Yanagi, Thomas Pichler, Dominik Eder

In this paper, we have performed the filling of single-walled carbon nanotubes (SWCNTs) with mean diameters of 1.4 and 1.9 nm synthesized by the arc-discharge and chemical vapor deposition (CVD) methods, respectively, with silver chloride. The doping effect of the encapsulated compound on SWCNTs is studied by Raman spectroscopy and X-ray photoelectron spectroscopy. It is shown that the filling of nanotubes with silver chloride leads to p-doping of SWCNTs accompanied by charge transfer from the SWCNTs to the salt and downshift of their Fermi level. It is found that the filling of SWCNTs synthesized by different methods results in different doping levels of nanotubes. The arc-discharge 1.4 nm-diameter SWCNTs have larger doping level than CVD 1.9 nm-diameter nanotubes. The obtained information about the influence of the filler on the electronic properties of SWCNTs synthesized by different methods is elemental for applications of nanotubes in nanoelectronic devices.

Electronic Properties of Materials
Physica Status Solidi (B) Basic Research
No. of pages
Publication date
Publication status
E-pub ahead of print
Peer reviewed
Austrian Fields of Science 2012
103009 Solid state physics, 103018 Materials physics, 103020 Surface physics
electronic properties, filled carbon nanotubes, Raman spectroscopy, silver chloride, single-walled carbon nanotube, X-ray photoelectron spectroscopy
ASJC Scopus subject areas
Electronic, Optical and Magnetic Materials, Condensed Matter Physics
Portal url