Optimization of preparation of epitaxial β-SiC layers formed by fullerene-carbonization of silicon

Author(s)
M. Philipp, M. Fünffinger, S. Henke, W. Göb, W. Lang, H. Kuzmany, B. Rauschenbach, B. Stritzker
Organisation(s)
Electronic Properties of Materials
Pages
600-604
No. of pages
5
Publication date
1996
Austrian Fields of Science 2012
103018 Materials physics
Portal url
https://ucris.univie.ac.at/portal/en/publications/optimization-of-preparation-of-epitaxial-sic-layers-formed-by-fullerenecarbonization-of-silicon(1a0e674c-2fcb-4917-8b20-838c7831bd17).html