Very high boron-doping on single-walled carbon nanotubes from a solid precursor

Author(s)
Carlos Reinoso, Lei Shi, Oleg Domanov, Philip Rohringer, Thomas Pichler, Paola Ayala
Abstract

Despite the tremendous progress on the use of chemical vapor deposition as widespread method for the synthesis of pristine carbon nanotubes, introducing substitutional heteroatoms like boron on the carbon sites imposes several difficulties. The reported precursors used for boron-doped single-walled carbon nanotubes have exclusively been liquid based. Here we show that the use of solid sodium tetraphenylborate, which contains both carbon and boron in its stoichiometry, do not only effectively circumvent the experimental problems reported so far in the synthesis of these materials, but it enables the incorporation of up to 27.5 at.% of boron atoms in the samples as-grown. This percentage corresponds to a total B content, not to substitutional B configuration exclusively. Spectral deconvolution of the B1s signal suggests a 13 at.% of graphitic bonding environment of B within the samples. We propose an alternative method capable of producing B-doped singled-walled tubes with a small diameter distribution (∼0.89 nm to ∼1.9 nm) within a ∼60

°C temperature window.

Organisation(s)
Electronic Properties of Materials
Journal
Carbon
Volume
140
Pages
259-264
No. of pages
6
ISSN
0008-6223
DOI
https://doi.org/10.1016/j.carbon.2018.08.031
Publication date
08-2018
Peer reviewed
Yes
Austrian Fields of Science 2012
103018 Materials physics
Keywords
ASJC Scopus subject areas
Chemistry(all), Materials Science(all)
Portal url
https://ucris.univie.ac.at/portal/en/publications/very-high-borondoping-on-singlewalled-carbon-nanotubes-from-a-solid-precursor(ed980bea-593e-43f8-b187-780c168b5b89).html