Dopant-configuration controlled carrier scattering in graphene

Author(s)
Benoy Anand, Mehmet Karakaya, Gyan Prakash, S. Siva Sankara Sai, Reji Philip, Paola Ayala, Anurag Srivastava, Ajay K. Sood, Apparao M. Rao, Ramakrishna Podila
Abstract

Controlling optical and electronic properties of graphene via substitutional doping is central to many fascinating applications. Doping graphene with boron (B) or nitrogen (N) has led to p- or n-type graphene; however, the electron mobility in doped-graphene is severely compromised due to increased electron-defect scattering. Here, we demonstrate through Raman spectroscopy, nonlinear optical and ultrafast spectroscopy, and density functional theory that the graphitic dopant configuration is stable in graphene and does not significantly alter electron-electron or electron-phonon scattering, that is otherwise present in doped graphene, by preserving the crystal coherence length (L-a).

Organisation(s)
Electronic Properties of Materials
External organisation(s)
Sri Sathya Sai Institute of Higher Learning, Clemson University, Indian Institute of Science, Raman Research Institute, Indian Institute of Information Technology and Management, Gwalior, Yachay Tech University
Journal
RSC Advances
Volume
5
Pages
59556-59563
No. of pages
8
ISSN
2046-2069
DOI
https://doi.org/10.1039/c5ra05338b
Publication date
2015
Peer reviewed
Yes
Austrian Fields of Science 2012
103018 Materials physics
Keywords
ASJC Scopus subject areas
Chemical Engineering(all), Chemistry(all)
Portal url
https://ucris.univie.ac.at/portal/en/publications/dopantconfiguration-controlled-carrier-scattering-in-graphene(d78cc941-616e-40ea-a8e7-69e3692e3d9c).html