Efficient gating of epitaxial boron nitride monolayers by substrate functionalization
- Author(s)
- A. Fedorov, C. S. Praveen, N. I. Verbitskiy, D. Haberer, D. Usachov, D. V. Vyalikh, A. Nefedov, C. Wöll, L. Petaccia, S. Piccinin, H. Sachdev, M. Knupfer, B. Büchner, S. Fabris, Alexander Grüneis
- Abstract
Insulating hexagonal boron nitride monolayers (hBN) are best known for being resistant to chemical functionalization. This property makes hBN an excellent substrate for graphene heterostructures, but limits its application as an active element in nanoelectronics where tunable electronic properties are needed. Moreover, the two-dimensional-materials' community wishes to learn more about the adsorption and intercalation characteristics of alkali metals on hBN, which have direct relevance to several electrochemistry experiments that are envisioned with layered materials. Here we provide results on ionic functionalization of hBN/metal interfaces with K and Li dopants. By combining angle-resolved photoemission spectroscopy (ARPES), x-ray photoelectron spectroscopy, and density functional theory calculations, we show that the metallic substrate readily ionizes the alkali dopants and exposes hBN to large electric fields and band-energy shifts. In particular, if hBN is in between the negatively charged substrate and the positive alkali ion, this allows us to directly study, using ARPES, the effects of large electric fields on the electron energy bands of hBN.
- Organisation(s)
- Electronic Properties of Materials
- External organisation(s)
- Saint Petersburg State University, Scuola Internazionale Superiore di Studi Avanzati, Universität zu Köln, Anuchin Research Institute and Museum of Anthropology, University of California, Berkeley, Technische Universität Dresden, Karlsruher Institut für Technologie, Elettra─Sincrotrone Trieste, Max Planck Institute for Polymer Research, Leibniz-Institut für Festkörper- und Werkstoffforschung Dresden
- Journal
- Physical Review B
- Volume
- 92
- No. of pages
- 7
- ISSN
- 1098-0121
- DOI
- https://doi.org/10.1103/PhysRevB.92.125440
- Publication date
- 09-2015
- Peer reviewed
- Yes
- Austrian Fields of Science 2012
- 103018 Materials physics
- Keywords
- ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials, Condensed Matter Physics
- Portal url
- https://ucris.univie.ac.at/portal/en/publications/efficient-gating-of-epitaxial-boron-nitride-monolayers-by-substrate-functionalization(960334bd-1731-46a1-8fd8-a16e75cf41d1).html