Novel approach to tailoring the electronic properties of single-walled carbon nanotubes by the encapsulation of high-melting gallium selenide using a single-step process

Author(s)
M. V. Kharlamova
Abstract

A single-step method of filling the channels of single-walled carbon nanotubes with the melt of refractory GaSe is proposed and successfully implemented. The filled nanotubes are investigated by optical absorption spectroscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy. It is found that charge transfer from the nanotube walls to embedded GaSe accompanied by lowering of the Fermi level in nanotubes occurs in the obtained nanocomposite; i.e., acceptor doping of nanotubes takes place.

Organisation(s)
Electronic Properties of Materials
External organisation(s)
Anuchin Research Institute and Museum of Anthropology
Journal
JETP Letters
Volume
98
Pages
272-277
No. of pages
6
ISSN
0021-3640
DOI
https://doi.org/10.1134/S0021364013180069
Publication date
11-2013
Peer reviewed
Yes
Austrian Fields of Science 2012
205017 Materials engineering
Keywords
Portal url
https://ucris.univie.ac.at/portal/en/publications/novel-approach-to-tailoring-the-electronic-properties-of-singlewalled-carbon-nanotubes-by-the-encapsulation-of-highmelting-gallium-selenide-using-a-singlestep-process(1e8fd101-8ae6-4c25-89f2-5bbcd05449d7).html