The Chemistry of Imperfections in N-Graphene

Author(s): Dmitry Usachov, Alexander Fedorov, Oleg Vilkov, Boris Senkovskiy, Vera K. Adamchuk, Lada V. Yashina, Andrey A. Volykhov, Mani Farjam, Nikolay I. Verbitskiy, Alexander Grueneis, Clemens Laubschat, Denis V. Vyalikh
Abstract: Many propositions have been already put forth for the practical use of N-graphene in various devices, such as batteries, sensors, ultracapacitors, and next generation electronics. However, the chemistry of nitrogen imperfections in this material still remains an enigma. Here we demonstrate a method to handle N-impurities in graphene, which allows efficient conversion of pyridinic N to graphitic N and therefore precise tuning of the charge carrier concentration. By applying photoemission spectroscopy and density functional calculations, we show that the electron doping effect of graphitic N is strongly suppressed by pyridinic N. As the latter is converted into the graphitic configuration, the efficiency of doping rises up to half of electron charge per N atom.
Organisation(s): Electronic Properties of Materials
External organisation(s): Saint Petersburg State University, Leibniz-Institut für Festkörper- und Werkstoffforschung Dresden, Universität zu Köln, Technische Universität Dresden, Anuchin Research Institute and Museum of Anthropology, Institute for Research in Fundamental Sciences (IPM)
Journal: Nano Letters: a journal dedicated to nanoscience and nanotechnology
Volume: 14
Pages: 4982-4988
No. of pages: 7
ISSN: 1530-6984
DOI: https://doi.org/10.1021/nl501389h
Publication date: 09-2014
Peer reviewed: Yes
Austrian Fields of Science 2012: 103020 Surface physics, 103018 Materials physics, 103009 Solid state physics
Keywords
ASJC Scopus subject areas: Condensed Matter Physics, Mechanical Engineering, Bioengineering, Chemistry(all), Materials Science(all)
Portal url: https://ucris.univie.ac.at/portal/en/publications/the-chemistry-of-imperfections-in-ngraphene(109b4531-1c07-4f02-a73e-78f15b8be9be).html