Electrical and micromechanical performance of ultrasonically cleaned silicon wafers

Author(s)
A. Nadtochiy, Artem Podolian, Vasyl Kuryliuk, A. Kuryliuk, Oleg Korotchenkov, Julian Schmid, Viktor Schlosser
Abstract

The evolution of the electrical and micromechanical properties of Si wafers subjected to a kHz-frequency ultrasonic treatment in a water-containing ultrasonic cleaning bath is reported. The cleaning stages observed with varying treatment time are discussed. It is believed that, wafer treating during the first ? 60 min is capable of removing contaminating particulates from the wafer surface and actives interface dangling bonds. These are leading to a decrease of subsurface resistance towards dislocation displacements as observed by the micro-hardness decrease, affect free carrier migration barriers seen in variations of the I-V barrier heights, and acts as recombination centers resulting in accelerated photovoltage decays. Although an exact mechanism is not yet clarified, a partial healing of the bonds may occur at longer excitation times ( ? 60-120 min) thus partially reversing the observed changes.

Organisation(s)
Electronic Properties of Materials
External organisation(s)
Taras Shevchenko National University of Kyiv (KNU)
Pages
261-264
No. of pages
4
DOI
https://doi.org/10.1109/MIEL.2010.5490485
Publication date
2010
Austrian Fields of Science 2012
Physics, Astronomy, Solid state physics
Portal url
https://ucris.univie.ac.at/portal/en/publications/electrical-and-micromechanical-performance-of-ultrasonically-cleaned-silicon-wafers(0c6b5015-577d-418a-b724-6dcca9e4fd9a).html