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Optimization of preparation of epitaxial β-SiC layers formed by fullerene-carbonization of silicon

Authors/others:Philipp, M.Fünffinger, M.Henke, S.Göb, W.Lang, W.Kuzmany, H.Rauschenbach, B.Stritzker, B.
Language:English
Number of pages:5
Date of publication:1996
Publication Type:Chapter
Host publication's title:Fullerenes and Fullerene Nanostructures
Host publication's editors:Kuzmany, H.Fink, J.Mehring, M.Roth, S.
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